PART |
Description |
Maker |
W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks 2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
W971GG6JB |
8M X 8 BANKS X 16 BIT DDR2 SDRAM
|
Winbond
|
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
K4S510732C |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
M12L2561616A-7TG |
4M x 16 Bit x 4 Banks Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M56163PE-RG K4M56163PE-R K4M56163PE-F90 K4M56163 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, CSP-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, CSP-54
|
Samsung Semiconductor Co., Ltd. Omron Electronics, LLC SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|